Obiekt
Tytuł: Interaction of nitrogen dioxide with free base phthalocyanine
Autor:
Współtwórca:
Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja
Opis:
Optica Applicata, Vol. 35, 2005, nr 3, s. 323-328
Abstrakt:
Wydawca:
Oficyna Wydawnicza Politechniki Wrocławskiej
Miejsce wydania:
Data wydania:
Typ zasobu:
Identyfikator zasobu:
Źródło:
<sygn. PWr A3481II> ; kliknij tutaj, żeby przejść ; kliknij tutaj, żeby przejść
Język:
Powiązania:
Optica Applicata ; Optica Applicata, Vol. 35, 2005 ; Optica Applicata, Vol. 35, 2005, nr 3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki
Prawa:
Wszystkie prawa zastrzeżone (Copyright)
Prawa dostępu:
Dla wszystkich w zakresie dozwolonego użytku
Lokalizacja oryginału:
Kolekcje, do których przypisany jest obiekt:
- Dolnośląska Biblioteka Cyfrowa > Uczestnicy Konsorcjum > 01. Politechnika Wrocławska > Czasopisma > Wydane w PWr > Optica Applicata
- Dolnośląska Biblioteka Cyfrowa > Zasoby > 2. Czasopisma > Czasopisma współczesne
- Dolnośląska Biblioteka Cyfrowa > Dziedziny nauki > 6. Nauki ścisłe i przyrodnicze
Data ostatniej modyfikacji:
2019-08-22
Data dodania obiektu:
2019-08-22
Liczba wyświetleń treści obiektu:
8
Wszystkie dostępne wersje tego obiektu:
https://www.dbc.wroc.pl/publication/140694
Wyświetl opis w formacie RDF:
Wyświetl opis w formacie OAI-PMH:
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Optica Applicata
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Optica Applicata, Vol. 1, 1971
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Optica Applicata, Vol. 2, 1972
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Optica Applicata, Vol. 3, 1973
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Optica Applicata, Vol. 4, 1974
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Optica Applicata, Vol. 5, 1975
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Optica Applicata, Vol. 6, 1976
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Optica Applicata, Vol. 7, 1977
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Optica Applicata, Vol. 8, 1978
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Optica Applicata, Vol. 9, 1979
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Optica Applicata, Vol. 10, 1980
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Optica Applicata, Vol. 11, 1981
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Optica Applicata, Vol. 12, 1982
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Optica Applicata, Vol. 13, 1983
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Optica Applicata, Vol. 14, 1984
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Optica Applicata, Vol. 15, 1985
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Optica Applicata, Vol. 16, 1986
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Optica Applicata, Vol. 17, 1987
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Optica Applicata, Vol. 18, 1988
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Optica Applicata, Vol. 19, 1989
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Optica Applicata, Vol. 20, 1990
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Optica Applicata, Vol. 21, 1991
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Optica Applicata, Vol. 22, 1992
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Optica Applicata, Vol. 23, 1993
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Optica Applicata, Vol. 24, 1994
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Optica Applicata, Vol. 25, 1995
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Optica Applicata, Vol. 26, 1996
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Optica Applicata, Vol. 27, 1997
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Optica Applicata, Vol. 28, 1998
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Optica Applicata, Vol. 29, 1999
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Optica Applicata, Vol. 30, 2000
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Optica Applicata, Vol. 33, 2003
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Optica Applicata, Vol. 34, 2004
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Optica Applicata, Vol. 35, 2005
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Optica Applicata, Vol. 35, 2005, nr 1
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Optica Applicata, Vol. 35, 2005, nr 2
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Optica Applicata, Vol. 35, 2005, nr 3
- Editorial [Optica Applicata, Vol. 35, 2005, nr 3]
- Interaction of nitrogen dioxide with free base phthalocyanine
- Infrared second-order nonlinear optical effect in Sb2Te3–SrBr2–PbCl2 glass
- Influence of the composition of M78Si9B13 metallic glasses on their structural stability
- X-ray photoelectron spectroscopy studies of PrAlO3 crystals before and after thermal treatment
- Influence of surface states and bulk traps on non-equilibrium phenomena at GaAs and GaN surfaces
- Formation of cobalt hydrides in low temperature field evaporation
- Electron transport in the multi-terminal quantum dot system
- Hydrogen chemisorption on palladium surface in a high electric field
- High resolution photoemission yield study of the GaAs(100) surface cleaned by atomic hydrogen
- Influence of high pressure annealing on electrical properties of surface layer of neutron irradiated or germanium-doped Czochralski-grown silicon
- Some problems of molecular beam epitaxy growth of epitaxial structures of semiconductor lasers for a 980 nm band
- Photoluminescence of poly(N-vinylcarbazole) thin films deposited by dip-coating technique
- Thin films of ZnO and ZnMnO by atomic layer epitaxy
- Post-deposition stress evolution in Cu and Ag thin films
- Properties of transparent oxide thin films prepared by plasma deposition
- On the microstructure of TiHfOx thin films
- Dielectric coatings for infrared detectors
- Angle-resolved photoemission of ultrathin Pb films on Si(111)-(6×6)Au: quantum size effect
- Band structure of Au monoatomic chains on Si(335) and Si(557) surfaces
- Deep centers in InGaAs/InP layers grown by molecular beam epitaxy
- Properties of constricted 2DEG/metal structures in microwave electric fields
- Optical properties of InGaAs/GaAs quantum wells with different distance from Si-delta-doping layer
- Thermoreflectance and micro-Raman measurements of the temperature distributions in broad contact laser diodes
- Certain effects of field and light induced electron emission from indium thin oxide (ITO) layers
- Computer simulation studies of roughness of thin films formed in the ion beam assisted deposition (IBAD) process
- Determination of surface waviness using radius of curvature measurement with laser scanning technique
- Optical properties of InGaAsP quantum well for infrared emission investigated by modulation spectroscopy
- Measurement of stress as a function of temperature in Ag and Cu thin films
- Application of interference methods for determination of curvature radius in metal–oxide–semiconductor (MOS) structures
- Photoreflectance spectroscopy of thick GaN layers grown by hydride vapour phase epitaxy technique
- Properties and origin of oval defects in epitaxial structures grown by molecular beam epitaxy
- Influence of materials grain structure on the performance of optoelectronic devices
- Analysis of high-power diode laser thermal properties by micro-Raman spectroscopy
- Lock-in phase analysis of copper phthalocyanine photoabsorption spectrum
- Thermally induced changes of broad contact pulse-operated single quantum well (SQW) separate confinement heterostructure (SCH) laser spectra
- Simplified modelling of photonic-crystal-confined vertical-cavity surface-emitting diode lasers
- Analysis of thermal conditions of pulse operated single quantum well separate confinement heterostructure (SQW SCH) lasers
- Piezoelectric effect and spontaneous polarization in computer modelling of AIII–N heterostructures
- Analysis of mounting induced strain in semiconductor structures by means of spatially resolved optical modulation techniques
- Thermoreflectance study of temperature distribution on the semiconductor laser mirrors
- Optimization of multi quantum well solar cell
- Magnetic field sensors based on undoped In0.53Ga0.47As/InP heterostructures fabricated by molecular beam epitaxy and metalorganic chemical vapor deposition
- An impact of a localization of an oxide aperture within a vertical-cavity surface-emitting diode laser (VCSEL) cavity on its lasing threshold
- AlGaAs/GaAs heterojunction phototransistor with Zn delta-doped base region
- Envelope function description of quantum cascade laser electronic states
- High-sensitivity NO2 sensor based on n-type InP epitaxial layers
- Applications of functionally graded materials in optoelectronic devices
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Optica Applicata, Vol. 35, 2005, nr 4
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Optica Applicata, Vol. 35, 2005, nr 1
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Optica Applicata, Vol. 36, 2006
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Optica Applicata, Vol. 37, 2007
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Optica Applicata, Vol. 38, 2008
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Optica Applicata, Vol. 39, 2009
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Optica Applicata, Vol. 40, 2010
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Optica Applicata, Vol. 41, 2011
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Optica Applicata, Vol. 42, 2012
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Optica Applicata, Vol. 43, 2013
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Optica Applicata, Vol. 44, 2014
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Optica Applicata, Vol. 45, 2015
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Optica Applicata, Vol. 46, 2016
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Optica Applicata, Vol. 47, 2017
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Optica Applicata, Vol. 1, 1971
| Nazwa wydania | Data |
|---|---|
| Interaction of nitrogen dioxide with free base phthalocyanine | 2019-08-22 |
