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The application of plasma enhanced chemical vapor deposition technique to fabricate SiO2/Si3N4 coatings for resonant cavity enhanced photodetector operating in the near-infrared range at 1550 nm is considered. The conditions required to deposit high quality distributed Bragg reflector (DBR) are discussed. Optical properties of dielectric films fabricated are presented. Experimentally observed reflectivity of the mirrors is compared with the one numerically predicted for DBRs.