Object

Title: Parameters comparison of p-i-n and quantum well solar cells

Creator:

Prażmowska, Joanna ; Korbutowicz, Ryszard ; Paszkiewicz, Regina ; Tłaczała, Marek

Contributor:

Gaj, Miron. Redakcja

Description:

Optica Applicata, Vol. 37, 2007, nr 4, s. 371-376

Abstrakt:

Double gallium arsenide quantum wells (2QW) were inserted within AlxGa1–xAs barriers of the intrinsic layer of an ordinary solar cell. Structure parameters have strong influence on device performance and should be precisely controlled in order to obtain the enhancement of conversion efficiency. Computer simulations of solar cells were carried out by SimWindows program v. 1.5.0. Some parameters of optimized quantum well solar cells (QWSC) and reference p-i-n solar cell structures, like: series resistance Rs, shunt resistance Rsh, emission coefficients (n1 and n2), diffusion and recombination components of current (Jd and Jr) were compared.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2007

Resource Type:

artykuł

Resource Identifier:

oai:dbc.wroc.pl:63135

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 37, 2007 ; Optica Applicata, Vol. 37, 2007, nr 4 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska

Group publication title:

Optica Applicata

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