Search for: [Abstrakt = "Recent studies of room\-temperature irradiation\-induced defects in Ge using space\-charge capacitance\-transient spectroscopy are reviewed. From these measurements only two defect complexes have been unambiguously identified until now\: the E\-center \(the group\-V impurity\-vacancy pair\) and the A\-center \(the interstitial oxygen\-vacancy pair\). However, contrary to silicon where each of these centers introduces only one energy level, in germanium the E\-center has three energy levels corresponding to four charge states \(=, –, 0, \+\), and the A\-center has two levels corresponding to three charge states \(=, –, 0\). Another feature specific to each material is the anneal temperature. Both centers disappear below 150°C in germanium, whereas in silicon the E\-center anneals out at \~150°C, depending on the charge state, and the A\-center is stable up to 350°C."]

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