Search for: [Abstrakt = "Double quantum well \(DQW\) \(In, Ga\)\(As, N\)\/GaAs p\-i\-n photodetectors, grown by solid source molecular beam epitaxy using a radio\-frequency plasma source for nitrogen with absorption for wavelengths above 870 nm have been investigated. The active region of the photodetectors contained two very thin absorption layers\: 10.5 nm Ga\(As, N\) \(structure #DP02\) or 4 nm \(In, Ga\)\(As, N\) \(#DP03\). In spite of this, photodetectors exhibited high sensitivity \(0.0525 A\/W for 980 nm\) for wavelength greater than the absorption edge of GaAs \(870 nm\). The dark current of photodetectors did not exceed 0.1 μA."]

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