Search for: [Abstrakt = "A technology of high power, continuous\-wave \(CW\) semiconductor lasers has been elaborated. AlGaAs\/InGaAs\/GaAs heterostructures, grown by molecular beam epitaxy \(MBE\), were used to fabricate laser diodes. The active region of laser diode was formed as strained, 8 nm thick, quantum well \(QW\) InGaAs layer. The AlGaAs layers of graded composition and graded refractive index \(GRIN\) formed the waveguide. Lasers were processed into wide stripe \(W = 100 μm\) mesas and were mounted on copper submounts and Peltier thermoelements in the standard TO\-3 transistor housing. For stabilization of laser output, a silicon photodiode was placed next to a laser chip in the same case. Typical threshold current densities were 150 A\/cm2, and the quantum efficiencies were of the order of 0.8 W\/A. Lasers may work in pulsed regime as well as in CW regime with guaranteed optical power of 1 W at 300 K. The record threshold current densities achieved for 700 μm cavity were as low as 130 A\/cm2 and the characteristic temperature was T0 = 200 K."]

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