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Title:

Properties and origin of oval defects in epitaxial structures grown by molecular beam epitaxy

Group publication title:

Optica Applicata

Creator:

Szerling, Anna ; Kosiel, Kamil ; Wójcik-Jedlińska, Anna ; Płuska, Mariusz ; Bugajski, Maciej

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Subject and Keywords:

optyka ; oval defects ; A3B5 ; molecular beam epitaxy (MBE) ; spectrally resolved photoluminescence ; scanning electron microscopy (SEM) ; cathodoluminescence

Description:

Optica Applicata, Vol. 35, 2005, nr 3, s. 537-548

Abstrakt:

A class of macroscopic, so-called oval defects, which may be found in an epitaxial A3B5 materials grown by molecular beam epitaxy (MBE) technique, is studied in this paper. The investigations were performed on the structures containing (Al)GaAs or InGaAs layers. The geometry, morphology as well as the optical properties of defects were studied by different experimental methods, like spatially resolved photoluminescence (SRPL), scanning electron microscopy (SEM) and cathodoluminescence (CL). The conclusions are drawn as to the sources of defects and conditions of their appearance.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2005

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 35, 2005 ; Optica Applicata, Vol. 35, 2005, nr 3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska