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In this paper an application of a recently developed laser plasma source of extreme ultraviolet (EUV) for optical measurements of optical characteristics of Mo/Si multilayer mirrors is presented. The source is based on an xenon-helium double-stream gas puff target irradiated with laser pulses from a Nd : YAG laser system (E = 0.55 J, t = 3.9 ns, f = 10 Hz, M 2 = 2.5). The results show that the source can be useful for EUV lithography technologies as a metrology tool in the semiconductor industry.