Title:

Investigation of strained InGaAs layers on GaAs substrate

Group publication title:

Optica Applicata

Creator:

Jasik, Agata ; Sass, Jerzy ; Mazur, Krystyna ; Wesołowski, Marek

Contributor:

Gaj, Miron. Redakcja

Subject and Keywords:

optyka ; low pressure metalorganic vapour phase epitaxy (LP MOVPE) ; strained InGaAs layer ; critical layer thickness ; high resolution X-ray diffractometry (HR XRD) ; diffuse scattering ; atomic force microscopy (AFM) ; misfit dislocation ; plastic relaxation

Description:

Optica Applicata, Vol. 37, 2007, nr 3, s. 237-242

Abstrakt:

A set of In0.13Ga0.87As layers of various thicknesses on GaAs substrate has been grown by low pressure metalorganic vapour phase epitaxy (LP MOVPE). The initial stage of relaxation process has been investigated and critical layer thickness (CLT) has been determined. The investigations were performed by applying atomic force microscopy (AFM), high resolution X-ray diffractometry (HR XRD) with conventional and synchrotron radiation. The value of CLT determined by AFM observations agrees with that obtained from diffuse scattering measurements. The value is in agreement with HR XRD results.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2007

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 37, 2007 ; Optica Applicata, Vol. 37, 2007, nr 3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska