TY - GEN N1 - Optica Applicata, Vol. 35, 2005, nr 3, s. 627-634 N2 - In this paper we, describe the design and fabrication process of Hall and magnetoresistor cross-shaped sensors using In0.53Ga0.47As/InP layer structures as active media. The influence of geometric correction factor GH on sensitivity parameters of these devices has been investigated. The results have been used in order to optimize the structure design behavior at temperatures ranging from 3 to 300 K. The large changes of the galvanomagnetic parameters vs. magnetic field and temperature allow these devices to be used as signal and measurement magnetic field sensors. L1 - http://www.dbc.wroc.pl/Content/72889/optappl_3503p627.pdf M3 - artykuł L2 - http://www.dbc.wroc.pl/Content/72889 PY - 2005 KW - optyka KW - Hall sensors KW - magnetoresistors KW - InGaAs/InP heterostructures KW - electronic transport KW - geometric correction factor KW - molecular beam epitaxy (MBE) KW - metalorganic chemical vapor deposition (MOCVD) C1 - Wszystkie prawa zastrzeżone (Copyright) A1 - Przesławski, Tomasz A1 - Wolkenberg, Andrzej A1 - Kaniewski, Janusz A1 - Regiński, Kazimierz A1 - Jasik, Agata A2 - Gaj, Miron. Redakcja A2 - Wilk, Ireneusz. Redakcja PB - Oficyna Wydawnicza Politechniki Wrocławskiej C6 - Dla wszystkich w zakresie dozwolonego użytku LA - eng CY - Wrocław T1 - Magnetic field sensors based on undoped In0.53Ga0.47As/InP heterostructures fabricated by molecular beam epitaxy and metalorganic chemical vapor deposition UR - http://www.dbc.wroc.pl/dlibra/publication/edition/72889 ER -