TY - GEN N1 - Optica Applicata, Vol. 35, 2005, nr 3, s. 605-610 N2 - A wide range of applications of high-power diode lasers is connected with the tendency towards device miniaturization resulting in increased power densities. To manage the thermal load, the chips or arrays of chips (the so-called laser lines or cm–bars) have to be mounted with low thermal resistance on a heat sink of high thermal conductivity. These measures potentially introduce mechanical strain and defects into the semiconductor chips affecting the parameters of laser emission, e.g., spectral position. The ability of optical modulation techniques to monitor spatial strain distribution along the devices was evaluated. L1 - http://www.dbc.wroc.pl/Content/72886/optappl_3503p605.pdf M3 - artykuł L2 - http://www.dbc.wroc.pl/Content/72886 PY - 2005 KW - optyka KW - electroreflectance KW - mounting induced strain KW - laser bar C1 - Wszystkie prawa zastrzeżone (Copyright) A1 - Pierściński, Kamil A1 - Piwoński, Tomasz A1 - Ochalski, Tomasz J. A1 - Kowalczyk, Emil A1 - Wawer, Dorota A1 - Bugajski, Maciej A2 - Gaj, Miron. Redakcja A2 - Wilk, Ireneusz. Redakcja PB - Oficyna Wydawnicza Politechniki Wrocławskiej C6 - Dla wszystkich w zakresie dozwolonego użytku LA - eng CY - Wrocław T1 - Analysis of mounting induced strain in semiconductor structures by means of spatially resolved optical modulation techniques UR - http://www.dbc.wroc.pl/dlibra/publication/edition/72886 ER -