TY - GEN N1 - Optica Applicata, Vol. 35, 2005, nr 3, s. 591-595 N2 - Junction temperature affects laser diode performance in many ways. Magnitude of the light output power, a center wavelength of the spectrum and diode reliability are all strongly dependent on the junction temperature. A simple electrical method to measure laser diode junction temperature has been developed. It is based on the measurement of the junction voltage change, which is due to the change of its temperature and is induced by supplying the laser with DC current in parallel to the pulsed driving current. Junction temperature dynamics in the pulse operated GaAs based SQW SCH quantum well broad contact lasers designed for emission at 980 nm was studied and results are presented. Additionally, junction cooling in these lasers as a function of time was also assessed. L1 - http://www.dbc.wroc.pl/Content/72853/optappl_3503p591.pdf M3 - artykuł L2 - http://www.dbc.wroc.pl/Content/72853 PY - 2005 KW - optyka KW - junction temperature dynamics KW - laser C1 - Wszystkie prawa zastrzeżone (Copyright) A1 - Ornoch, Leszek A1 - Kowalczyk, Emil A1 - Mroziewicz, Bohdan A2 - Gaj, Miron. Redakcja A2 - Wilk, Ireneusz. Redakcja PB - Oficyna Wydawnicza Politechniki Wrocławskiej C6 - Dla wszystkich w zakresie dozwolonego użytku LA - eng CY - Wrocław T1 - Analysis of thermal conditions of pulse operated single quantum well separate confinement heterostructure (SQW SCH) lasers UR - http://www.dbc.wroc.pl/dlibra/publication/edition/72853 ER -