TY - GEN N1 - Optica Applicata, Vol. 35, 2005, nr 3, s. 471-477 N2 - In0.22Ga0.78As/GaAs single quantum wells with different distance from a delta doped layer have been investigated by using contactless electroreflectance (CER) spectroscopy. The oscillator strength of optical transitions and the value of the built-in electric field have been determined from CER spectra. Obtained results have been compared with theoretical calculations preformed in the framework of the effective mass approximation. In order to accurately find the wavefunctions of electrons and holes confined in the quantum well embedded in the built-in electric field, the time-dependent Schrödinger equation has been solved. L1 - http://www.dbc.wroc.pl/Content/72835/optappl_3503p471.pdf M3 - artykuł L2 - http://www.dbc.wroc.pl/Content/72835 PY - 2005 KW - optyka KW - quantum well KW - contactless electroreflectance KW - built-in electric field KW - delta-doping C1 - Wszystkie prawa zastrzeżone (Copyright) A1 - Motyka, Marcin A1 - Sęk, Grzegorz A1 - Andrzejewski, Janusz A1 - Kudrawiec, Robert A1 - Misiewicz, Jan A1 - Ściana, Beata A1 - Radziewicz, Damian A1 - Tłaczała, Marek A2 - Gaj, Miron. Redakcja A2 - Wilk, Ireneusz. Redakcja PB - Oficyna Wydawnicza Politechniki Wrocławskiej C6 - Dla wszystkich w zakresie dozwolonego użytku LA - eng CY - Wrocław T1 - Optical properties of InGaAs/GaAs quantum wells with different distance from Si-delta-doping layer UR - http://www.dbc.wroc.pl/dlibra/publication/edition/72835 ER -