TY - GEN N1 - Optica Applicata, Vol. 35, 2005, nr 3, s. 443-448 N2 - The electronic band structure of extremely thin (from 1 to 8 monoatomic layer (ML) thick) epitaxial Pb(111) films grown at low temperatures in ultrahigh vacuum (UHV) condition on Si(111)-(6×6)Au substrate is studied with angle-resolved photoelectron spectroscopy (ARPES). The morphology of the Pb film is determined with scanning tunneling microscopy (STM). Normal-emission photoelectron spectra recorded at the sample temperature of 130 K reveal quantum well states (QWS) characteristic of quantization perpendicular to the film surface. The energies of these states as a function of the number of the Pb(111) monoatomic layers are determined and compared with calculated in terms of the Bohr–Sommerfeld phase accumulation model. L1 - http://www.dbc.wroc.pl/Content/72808/optappl_3503p443.pdf M3 - artykuł L2 - http://www.dbc.wroc.pl/Content/72808 PY - 2005 KW - optyka KW - quantum wells KW - Pb KW - angle-resolved photoelectron spectroscopy C1 - Wszystkie prawa zastrzeżone (Copyright) A1 - Kisiel, Marcin A1 - Skrobas, Kazimierz A1 - Jałochowski, Mieczysław A2 - Gaj, Miron. Redakcja A2 - Wilk, Ireneusz. Redakcja PB - Oficyna Wydawnicza Politechniki Wrocławskiej C6 - Dla wszystkich w zakresie dozwolonego użytku LA - eng CY - Wrocław T1 - Angle-resolved photoemission of ultrathin Pb films on Si(111)-(6×6)Au: quantum size effect UR - http://www.dbc.wroc.pl/dlibra/publication/edition/72808 ER -