TY - GEN N1 - Optica Applicata, Vol. 35, 2005, nr 3, s. 437-442 N2 - The application of plasma enhanced chemical vapor deposition technique to fabricate SiO2/Si3N4 coatings for resonant cavity enhanced photodetector operating in the near-infrared range at 1550 nm is considered. The conditions required to deposit high quality distributed Bragg reflector (DBR) are discussed. Optical properties of dielectric films fabricated are presented. Experimentally observed reflectivity of the mirrors is compared with the one numerically predicted for DBRs. L1 - http://www.dbc.wroc.pl/Content/72807/optappl_3503p437.pdf M3 - artykuł L2 - http://www.dbc.wroc.pl/Content/72807 PY - 2005 KW - optyka KW - plasma enhanced chemical vapor deposition (PECVD) KW - dielectric mirror KW - infrared photodetectors C1 - Wszystkie prawa zastrzeżone (Copyright) A1 - Hejduk, Krzysztof A1 - Pierściński, Kamil A1 - Rzodkiewicz, Witold A1 - Muszalski, Jan A1 - Kaniewski, Janusz A2 - Gaj, Miron. Redakcja A2 - Wilk, Ireneusz. Redakcja PB - Oficyna Wydawnicza Politechniki Wrocławskiej C6 - Dla wszystkich w zakresie dozwolonego użytku LA - eng CY - Wrocław T1 - Dielectric coatings for infrared detectors UR - http://www.dbc.wroc.pl/dlibra/publication/edition/72807 ER -