TY - GEN N1 - Optica Applicata, Vol. 35, 2005, nr 1, s. 129-137 N2 - Optical beam injection methods, such as an optical beam induced current (OBIC) one, have several advantages. Such methods enable a comprehensive analysis of photocurrent generated at the microregion of a semiconductor material or a device by focused light beam. In the paper, examples of applications of the OBIC method for : i) examination of the silicon p-i-n diodes used in a scanning electron microscope (SEM) as a detector and ii) localization of electrically active regions at the interface of the new transparent oxide semiconductor (TOS)–semiconductor structure have been outlined. L1 - http://www.dbc.wroc.pl/Content/71990/optappl_3501p129.pdf M3 - artykuł L2 - http://www.dbc.wroc.pl/Content/71990 PY - 2005 KW - optyka KW - transparent semiconducting oxide KW - heterojunction KW - p-i-n diode KW - optical beam KW - induced current C1 - Wszystkie prawa zastrzeżone (Copyright) A1 - Domaradzki, Jarosław A1 - Kaczmarek, Danuta A2 - Gaj, Miron. Redakcja A2 - Wilk, Ireneusz. Redakcja PB - Oficyna Wydawnicza Politechniki Wrocławskiej C6 - Dla wszystkich w zakresie dozwolonego użytku LA - eng CY - Wrocław T1 - Optical beam injection methods as a tool for analysis of semiconductor structures UR - http://www.dbc.wroc.pl/dlibra/publication/edition/71990 ER -