TY - GEN N1 - Optica Applicata, Vol. 39, 2009, nr 4, s. 739-747 N2 - In this paper, the authors present a new attempt to the growth of AlGaAs structures with continuous change of aluminum content by metalorganic vapor phase epitaxy (MOVPE) technique. The new method of design of multistage growth process for functionally graded semiconductor materials (FGM) has been proposed. A comparison between classical single stage and multistage growth process has been carried out. The analysis of PVS, ECV and SIMS results of fabricated photodetector structures shows significant differences in composition profile of theoretically estimated and fabricated structures, and prove that the new conception of multistage process has more advantages over classical single stage procedure. L1 - http://www.dbc.wroc.pl/Content/62181/optappl_3904p739.pdf M3 - artykuł L2 - http://www.dbc.wroc.pl/Content/62181 PY - 2009 KW - optyka KW - growth models KW - metalorganic vapor phase epitaxy (MOVPE) KW - gallium compounds KW - semiconducting III-V materials C1 - Wszystkie prawa zastrzeżone (Copyright) A1 - Wośko, Mateusz A1 - Paszkiewicz, Bogdan A1 - Radziewicz, Damian A1 - Ściana, Beata A1 - Paszkiewicz, Regina A1 - Tłaczała, Marek A1 - Kovac, Jaroslav A1 - Vincze, Andrej A2 - Gaj, Miron. Redakcja A2 - Urbańczyk, Wacław. Redakcja PB - Oficyna Wydawnicza Politechniki Wrocławskiej C6 - Dla wszystkich w zakresie dozwolonego użytku LA - eng CY - Wrocław T1 - New method of MOVPE process design for the growth of FGM AlGaAs/GaAs photodetectors UR - http://www.dbc.wroc.pl/dlibra/publication/edition/62181 ER -