TY - GEN N1 - Optica Applicata, Vol. 40, 2010, nr 1, s. 249-254 N2 - Strong influence on impurity-free vacancy enhanced disordering by the cap layer doping is studied on the InGaAs/InP quantum well structure with a doped cap layer. The observations are consistent with intermixing experiments using both Si3N4 and SiO2 as encapsulation dielectric layers. The largest intermixing occurs in the n-InP capped samples and is explained by the enhancement in out-diffusion of positive ions by the built-in electric field. L1 - http://www.dbc.wroc.pl/Content/58245/optappl_4001p249.pdf M3 - artykuł L2 - http://www.dbc.wroc.pl/Content/58245 PY - 2010 KW - optyka KW - point defects KW - interdiffusion KW - built-in electric field C1 - Wszystkie prawa zastrzeżone (Copyright) A1 - An, Yu-Peng A1 - Wang, Yi-Ding A1 - Cao, Feng A2 - Gaj, Miron. Redakcja A2 - Urbańczyk, Wacław. Redakcja PB - Oficyna Wydawnicza Politechniki Wrocławskiej C6 - Dla wszystkich w zakresie dozwolonego użytku LA - eng CY - Wrocław T1 - Doped cap layer effect on impurity-free vacancy enhanced disordering in InGaAs/InP quantum well structures UR - http://www.dbc.wroc.pl/dlibra/publication/edition/58245 ER -