Optimisation of LT-GaN nucleation layer growth conditions for the improvement of electrical and optical parameters of GaN layers - Wośko, Mateusz (Oficyna Wydawnicza Politechniki Wrocławskiej, 2019)
Optica Applicata, Vol. 49, 2019, nr 1, s. 167-176
Keywords: optyka; GaN; nucleation; recrystallization; metalorganic chemical vapor deposition (MOCVD); nitrides; LED; MSM; MESFET devices