@misc{Ściana_Beata_AlGaAs/GaAs_2005, author={Ściana, Beata and Radziewicz, Damian and Pucicki, Damian and Tłaczała, Marek and Kováč, Jaroslav and Srnanek, Rudolf}, contributor={Gaj, Miron. Redakcja and Wilk, Ireneusz. Redakcja}, year={2005}, rights={Wszystkie prawa zastrzeżone (Copyright)}, publisher={Oficyna Wydawnicza Politechniki Wrocławskiej}, description={Optica Applicata, Vol. 35, 2005, nr 3, s. 645-650}, language={eng}, abstract={The paper presents the technology and characterisation of n-p-n AlGaAs/GaAs heterojunction phototransistor (HPT) with a thin (50 nm) Zn delta-doped GaAs base region. Such a construction of the HPT transistor was applied to obtain higher current gain and lower power consumption. The electrical and optical properties of the HPT transistor were examined using electrochemical capacitance-voltage (EC-V) measurements, photovoltage, photocurrent and micro-Raman spectroscopies. The measured and simulated I-U characteristics as well as results of time response measurements are also presented and discussed. All investigations were carried out without a base bias (“floating base”).}, title={AlGaAs/GaAs heterojunction phototransistor with Zn delta-doped base region}, type={artykuł}, keywords={optyka, heterojunction phototransistor, Zn delta-doped GaAs, EC-V measurements, photovoltage spectroscopy, micro-Raman spectroscopy}, }