@misc{Domaradzki_Jarosław_Optical_2005, author={Domaradzki, Jarosław and Kaczmarek, Danuta}, contributor={Gaj, Miron. Redakcja and Wilk, Ireneusz. Redakcja}, year={2005}, rights={Wszystkie prawa zastrzeżone (Copyright)}, publisher={Oficyna Wydawnicza Politechniki Wrocławskiej}, description={Optica Applicata, Vol. 35, 2005, nr 1, s. 129-137}, language={eng}, abstract={Optical beam injection methods, such as an optical beam induced current (OBIC) one, have several advantages. Such methods enable a comprehensive analysis of photocurrent generated at the microregion of a semiconductor material or a device by focused light beam. In the paper, examples of applications of the OBIC method for : i) examination of the silicon p-i-n diodes used in a scanning electron microscope (SEM) as a detector and ii) localization of electrically active regions at the interface of the new transparent oxide semiconductor (TOS)–semiconductor structure have been outlined.}, title={Optical beam injection methods as a tool for analysis of semiconductor structures}, type={artykuł}, keywords={optyka, transparent semiconducting oxide, heterojunction, p-i-n diode, optical beam, induced current}, }