@misc{Nylandsted_Larsen_Arne_Capacitance-transient_2006,
 author={Nylandsted Larsen, Arne and Mesli, Abdelmadjid},
 contributor={Gaj, Miron. Redakcja and Wilk, Ireneusz. Redakcja},
 year={2006},
 rights={Wszystkie prawa zastrzeżone (Copyright)},
 publisher={Oficyna Wydawnicza Politechniki Wrocławskiej},
 description={Optica Applicata, Vol. 36, 2006, nr 2-3, s. 245-256},
 language={eng},
 abstract={Recent studies of room-temperature irradiation-induced defects in Ge using space-charge capacitance-transient spectroscopy are reviewed. From these measurements only two defect complexes have been unambiguously identified until now: the E-center (the group-V impurity-vacancy pair) and the A-center (the interstitial oxygen-vacancy pair). However, contrary to silicon where each of these centers introduces only one energy level, in germanium the E-center has three energy levels corresponding to four charge states (=, –, 0, +), and the A-center has two levels corresponding to three charge states (=, –, 0). Another feature specific to each material is the anneal temperature. Both centers disappear below 150°C in germanium, whereas in silicon the E-center anneals out at ~150°C, depending on the charge state, and the A-center is stable up to 350°C.},
 title={Capacitance-transient spectroscopy on irradiation-induced defects in Ge},
 type={artykuł},
 keywords={optyka, Ge-defect, deep level transient spectroscopy (DLTS), Laplace DLTS},
}