@misc{Wang_Yonggang_GaAs_2006,
 author={Wang, Yonggang and Ma, Xiaoyu and Wang, CuiLuan and Lin, Tao and Zhen, Kai and Wang, Jun and Zhong, Li and Jia, YuLei and Wei, ZhiYi},
 contributor={Gaj, Miron. Redakcja and Wilk, Ireneusz. Redakcja},
 year={2006},
 rights={Wszystkie prawa zastrzeżone (Copyright)},
 publisher={Oficyna Wydawnicza Politechniki Wrocławskiej},
 description={Optica Applicata, Vol. 36, 2006, nr 1, s. 23-28},
 language={eng},
 abstract={We report, for the first time to the best of our knowledge, on a passively Q-switched Nd:YVO4 laser with a GaAs absorber grown at low temperature (LT) by metal organic vapor phase expitaxy. Using the LT GaAs absorber as well as an output coupler, a passively Q-switched laser whose pulse duration is as short as 90 ns was obtained.},
 title={GaAs absorber grown at low temperature used in passively Q-switched diode pumped solid state laser},
 type={artykuł},
 keywords={optyka, GaAs, low temperature, Q-switch, Nd:YVO4 laser},
}