@misc{Gelczuk_Łukasz_Modification_2009, author={Gelczuk, Łukasz and Dąbrowska-Szata, Maria}, contributor={Gaj, Miron. Redakcja and Urbańczyk, Wacław. Redakcja}, year={2009}, rights={Wszystkie prawa zastrzeżone (Copyright)}, publisher={Oficyna Wydawnicza Politechniki Wrocławskiej}, description={Optica Applicata, Vol. 39, 2009, nr 4, s. 845-852}, language={eng}, abstract={This paper addresses some physical aspects and presents experimental results concerning to phenomena which evoke modification of band structure in lattice mismatched InGaAs/GaAs heterostructures, namely the introduction of extra deep-lying energy levels in the bandgap. The deep level transient spectroscopy reveals commonly observed deep level defects in GaAs-based structures associated with native point defects as well as misfit dislocations related to strain relaxation processes.}, title={Modification of energy bandgap in lattice mismatched InGaAs/GaAs heterostructures}, type={artykuł}, keywords={optyka, bandgap energy, lattice mismatch, deep level defects, InGaAs heterostructures, deep level transient spectroscopy (DLTS)}, }