@misc{Wośko_Mateusz_New_2009, author={Wośko, Mateusz and Paszkiewicz, Bogdan and Radziewicz, Damian and Ściana, Beata and Paszkiewicz, Regina and Tłaczała, Marek and Kovac, Jaroslav and Vincze, Andrej}, contributor={Gaj, Miron. Redakcja and Urbańczyk, Wacław. Redakcja}, year={2009}, rights={Wszystkie prawa zastrzeżone (Copyright)}, publisher={Oficyna Wydawnicza Politechniki Wrocławskiej}, description={Optica Applicata, Vol. 39, 2009, nr 4, s. 739-747}, language={eng}, abstract={In this paper, the authors present a new attempt to the growth of AlGaAs structures with continuous change of aluminum content by metalorganic vapor phase epitaxy (MOVPE) technique. The new method of design of multistage growth process for functionally graded semiconductor materials (FGM) has been proposed. A comparison between classical single stage and multistage growth process has been carried out. The analysis of PVS, ECV and SIMS results of fabricated photodetector structures shows significant differences in composition profile of theoretically estimated and fabricated structures, and prove that the new conception of multistage process has more advantages over classical single stage procedure.}, title={New method of MOVPE process design for the growth of FGM AlGaAs/GaAs photodetectors}, type={artykuł}, keywords={optyka, growth models, metalorganic vapor phase epitaxy (MOVPE), gallium compounds, semiconducting III-V materials}, }