@misc{Szyszka_Adam_Surface_2009,
 author={Szyszka, Adam and Paszkiewicz, Bogdan and Paszkiewicz, Regina and Tłaczała, Marek},
 access={Dla wszystkich w zakresie dozwolonego użytku},
 address={Wrocław},
 year={2009},
 description={Optica Applicata, Vol. 39, 2009, nr 4, s. 723-728},
 language={eng},
 abstract={A correlation of surface potential maps and photocurrent distribution images in metal–semiconductor–metal (MSM) structures allows to notice spatial nonuniformities in detector principle of operation. This effect exists only for low frequency modulation of optical excitation. This phenomenon was explained by the inhomogeneity of potential barriers and surface states density in heteroepitaxial gallium nitride layers caused by their columnar structure.},
 title={Surface photocurrent nonuniformities in MSM detectors fabricated in gallium nitride heteroepitaxial layers},
 type={artykuł},
 contributor={Gaj, Miron. Redakcja},
 contributor={Urbańczyk, Wacław. Redakcja},
 rights={Wszystkie prawa zastrzeżone (Copyright)},
 publisher={Oficyna Wydawnicza Politechniki Wrocławskiej},
 keywords={optyka, metal–semiconductor–metal (MSM), UV detector, gallium nitride, optical beam induced current (OBIC), scanning surface potential microscopy (SSPM)},
}