Search for: [Abstrakt = "The paper presents the technology and characterisation of n\-p\-n AlGaAs\/GaAs heterojunction phototransistor \(HPT\) with a thin \(50 nm\) Zn delta\-doped GaAs base region. Such a construction of the HPT transistor was applied to obtain higher current gain and lower power consumption. The electrical and optical properties of the HPT transistor were examined using electrochemical capacitance\-voltage \(EC\-V\) measurements, photovoltage, photocurrent and micro\-Raman spectroscopies. The measured and simulated I\-U characteristics as well as results of time response measurements are also presented and discussed. All investigations were carried out without a base bias \(“floating base”\)."]

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